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Home > Product > TC58CYG0S3HQAIE FLASH - NAND（SLC）

Product

DDR
- DDR5
- DDR4
- DDR3
- DDR2
- DDR1
- SDRAM
- DDR SDRAM
GDDR
- GDDR7
- GDDR6X
- GDDR6
- GDDR5
- GDDR4
- GDDR3
- GDDR1
LPDDR
- LPDDR5X
- LPDDR5
- LPDDR4x
- LPDDR4
- LPDDR3
- LPDDR2
- LPDDR1
FLASH
- NAND FLASH
- NOR FLASH
eMMC
MCP
eMCP
- EMMC+LPDDR
RLDRAM
- RLDRAM 3
- RLDRAM（1&2）
UFS
- UFS
HBM
SSD
- Consumer SSD
- Enterprise SSD
- SAMSUNG
- SK Hynix
- Intel
- MICRON
- Western digital
- Kingston
- Crucial
RAM
- ECC UDIMM
- ECC SODIMM
- LRDIMM
- UDIMM
- RDIMM
- SODIMM
- SOEDIMM
- EUDIMM
HDD
CPU
- INTEL
- Intel Xeon
- MPU
GPU
- NVIDIAGPU
Wafer
- SKHynix
- Samsung
GPU server
- Server Accessories
HOT OFFER
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  - DDR3
- SDRAM
- DDR2
- DDR4
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- NAND Flash
- NOR FLASH
- Enterprise SSD
OTHER
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  - ST
  - GD
  - NXP
  - Microchip
- XILINX
  - XCV
  - XCS
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  - XCE
  - XAS
  - XC17
  - XC18
  - XC30
  - XC31
  - XC40
  - XC52
  - XC95
  - Virtex-XQ
  - XCU
  - XC7
- INTEL
  - FPGA
  - CPLD
  - DC converter
  - SOC
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- infineon
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- ISSI
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- NIC
- memory
- Switch

TEL：+86-755-82988826
PHONE：+8619166208396

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TC58CYG0S3HQAIE FLASH - NAND（SLC）

version:TC58CYG0S3HQAIE

brand:TOSHIBA

package:16-SOP

stagte:on sale

Technical:search

Consult

phone:+86 0755 82988826

mobil:+86 19166208396

QQ: 3628728973

email:3628728973@qq.com

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Product Detail

Memory type: non-volatile

Technology:FLASH-NAND

Technology:FLASH - NAND（SLC）

Storage capacity:1Gb

Memory organization:128M x 8

Memory interface:SPI

Clock frequency:104 MHz

Write cycle time:-

Access time:155 μs

Voltage - Supply:1.7V ~ 1.95V

Operating temperature:-40°C ~ 85°C（TA）

Mounting type: Surface mount type

Supplier device Package：16-SOP

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