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Home > Product > TH58NYG2S3HBAI6 FLASH - NAND（SLC）

Product

DDR
- DDR5
- DDR4
- DDR3
- DDR2
- DDR1
- SDRAM
- DDR SDRAM
GDDR
- GDDR7
- GDDR6X
- GDDR6
- GDDR5
- GDDR4
- GDDR3
- GDDR1
LPDDR
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- LPDDR3
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- NAND FLASH
- NOR FLASH
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MCP
eMCP
- EMMC+LPDDR
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- RLDRAM 3
- RLDRAM（1&2）
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- UFS
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SSD
- Consumer SSD
- Enterprise SSD
- SAMSUNG
- SK Hynix
- Intel
- MICRON
- Western digital
- Kingston
- Crucial
RAM
- ECC UDIMM
- ECC SODIMM
- LRDIMM
- UDIMM
- RDIMM
- SODIMM
- SOEDIMM
- EUDIMM
HDD
CPU
- INTEL
- Intel Xeon
- MPU
GPU
- NVIDIAGPU
Wafer
- SKHynix
- Samsung
GPU server
- Server Accessories
HOT OFFER
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  - DDR3
- SDRAM
- DDR2
- DDR4
- LPDDR2
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- LPDDR4
- LPDDR4X
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- eMMC
- NAND Flash
- NOR FLASH
- Enterprise SSD
OTHER
- MCU
  - ST
  - GD
  - NXP
  - Microchip
- XILINX
  - XCV
  - XCS
  - XCR
  - XCE
  - XAS
  - XC17
  - XC18
  - XC30
  - XC31
  - XC40
  - XC52
  - XC95
  - Virtex-XQ
  - XCU
  - XC7
- INTEL
  - FPGA
  - CPLD
  - DC converter
  - SOC
- TI
- SENSOR
- ONSEMI
- infineon
- ADI
- ISSI
- MAXIM
- TOSHIBA
- CYPRESS
- NIC
- memory
- Switch

TEL：+86-755-82988826
PHONE：+8619166208396

Q Q： 3628728973
e-mail：3628728973@qq.com

TH58NYG2S3HBAI6 FLASH - NAND（SLC）

version:TH58NYG2S3HBAI6

brand:TOSHIBA

package:63-BGA（9x11）

stagte:on sale

Technical:search

Consult

phone:+86 0755 82988826

mobil:+86 19166208396

QQ: 3628728973

email:3628728973@qq.com

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Product Detail

Memory type: non-volatile

Technology:FLASH-NAND

Technology:FLASH - NAND（SLC）

Storage capacity:4Gb

Memory organization:512M x 8

Memory interface:Parallel connection

Clock frequency:-

Write cycle time:25ns

Access time:-

Voltage - Supply:1.7V ~ 1.95V

Operating temperature:-40°C ~ 85°C（TA）

Mounting type: Surface mount type

Supplier device Package：63-BGA（9x11）

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