

| 脚位/封装 | TSOP-48 |
| 外包装 | |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 3.3 V |
| 温度规格 | 0° ~ 70°C |
| 速度 | 1 MHZ |
| 标准包装数量 | 1000 |
| 标准外箱 | |
| Number Of Words | 2G |
| Bit Organization | x8 |
| Density | 16G |
| Features | Polyimide (if applicable) |
| Package | TSOP I(48-pin CPL version) |
| Generation Feature Set | 3rd set of device features (rev only if different) |
| Speed Grade | Async only |
| Design Revision | C |
| Classification | 1-1-1-1 (Die-nCE-RnB-IO Channels) |
| Level | SLC |
| Production Status | Production |
| Package Material | Pb-free |
| Interface | Async only |
General Description Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal. For further details, see Device and Array Organization.