Model:FDMC86102 series:MOSFET BRAND:ONSEMI Description:N-Channel Shielded Gate Power Trench
? MOSFET 100V, 20A, 24mΩPb-free
Halide free
non AEC-Q and PPAP Status:Active Channel Polarity:N-Channel Configuration:Single V(BR)DSS Min (V):100 VGS Max (V):±20 VGS(th) Max (V):4 ID Max (A):20 PD Max (W):41 RDS(on) Max @ VGS = 2.5 V (mΩ):- RDS(on) Max @ VGS = 4.5 V (mΩ):- RDS(on) Max @ VGS = 10 V (mΩ):24 Qg Typ @ VGS = 4.5 V (nC):- Qg Typ @ VGS = 10 V (nC)8 Ciss Typ (pF):725 Package Type:PQFN-8