Model:FDD86110 series:MOSFET BRAND:ONSEMI Description:Shielded Gate PowerTrench
? MOSFET, N-Channel, 100 V, 50 A, 10.2 mΩPb-free
Halide free
non AEC-Q and PPAP Status:Active Channel Polarity:N-Channel Configuration:Single V(BR)DSS Min (V):100 VGS Max (V):±20 VGS(th) Max (V):4 ID Max (A):50 PD Max (W):127 RDS(on) Max @ VGS = 2.5 V (mΩ):- RDS(on) Max @ VGS = 4.5 V (mΩ):- RDS(on) Max @ VGS = 10 V (mΩ):10.2 Qg Typ @ VGS = 4.5 V (nC):- Qg Typ @ VGS = 10 V (nC)25 Ciss Typ (pF):1702 Package Type:DPAK-3 / TO-252-3