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MTA32ATF4G64HZ-2G6B2 SODIMM DDR4 MICROMProduct
- DDR
- GDDR
- LPDDR
- FLASH
- eMMC
- MCP
- eMCP
- RLDRAM
- UFS
- HBM
- SSD
- RAM
- HDD
- CPU
- GPU
- Wafer
- GPU server
- HOT OFFER
-
OTHER
- MCU
- XILINX
- INTEL
-
TI
- interface
- PMIC-Regulator-Linear
- Data Acquisition - Digital to Analog Converter ADC
- Linear Devices - Amplifiers
- Linear Devices - Voltage Regulators
- MCU
- switch controller
- power management
- DC converter
- voltage reference
- Comparators
- converter
- SENSOR
- driver
- monitor
- LED driver
- logic-signal switch
- Distribution switch
- grid inverter
- OTHER
- SENSOR
-
ONSEMI
- MOSFET
- Schottky diodes
- Rectifier
- AC-DC controller and regulator
- ESD diode
- LED driver
- Optocoupler-phototransistor output
- Monitor and reset the chip
- Switching diode
- Fast recovery/ultrafast recovery diode
- Logic gate
- Transistor
- General purpose diode
- Zener diode
- Linear regulator
- Operational Amplifier
- Gate drive IC
- OTHER
- infineon
- ADI
- ISSI
- MAXIM
- TOSHIBA
- CYPRESS
- NIC
- memory
- Switch
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TEL：+86-755-82988826
PHONE：+8619166208396
PHONE：+8619166208396
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Product Detail
Model：FDB1D7N10CL7
BRAND：onsemi
series：MOSEFT
description：MOSFET N-CH 100V 268A D2PAK
pack：（TR）
Part status：in stock
FET type：N channel
Technology：MOSFET
Drain-source voltage（Vdss）:100 V
25°C 时电流 - 连续漏极 (Id):268A（Tc）
Drive voltage (Max Rds On, Min Rds On):6V，15V
不同 Id、Vgs 时导通电阻（最大值）:1.65 毫欧 @ 100A，15V
不同 Id 时 Vgs(th)（最大值）:4V @ 700μA
不同 Vgs 时栅极电荷?(Qg)（最大值）:163 nC @ 10 V
Vgs（最大值）:±20V
不同 Vds 时输入电容 (Ciss)（最大值）:11600 pF @ 50 V
Power dissipation (maximum):250W（Tc）
Operating temperature:-55°C ~ 175°C（TJ）
Type of installation:表面贴装型
Supplier device packaging:D2PAK（TO-263）
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