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MTA32ATF4G64HZ-2G6B2 SODIMM DDR4 MICROMProduct
- DDR
- GDDR
- LPDDR
- FLASH
- eMMC
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- HOT OFFER
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OTHER
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TI
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ONSEMI
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- Fast recovery/ultrafast recovery diode
- Logic gate
- Transistor
- General purpose diode
- Zener diode
- Linear regulator
- Operational Amplifier
- Gate drive IC
- OTHER
- infineon
- ADI
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- NIC
- memory
- Switch
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Product Detail
Model：NVATS68301PZT4G
BRAND：onsemi
series：MOSEFT
description：MOSFET P-CHANNEL 100V 31A DPAK
pack：（TR）
Part status：in stock
FET type：P 通道
Technology：MOSFET
Drain-source voltage（Vdss）:100 V
25°C 时电流 - 连续漏极 (Id):31A（Ta）
Drive voltage (Max Rds On, Min Rds On):10V
不同 Id、Vgs 时导通电阻（最大值）:75 毫欧 @ 14A，10V
不同 Id 时 Vgs(th)（最大值）:3.5V @ 1mA
不同 Vgs 时栅极电荷?(Qg)（最大值）:55 nC @ 10 V
Vgs（最大值）:±20V
不同 Vds 时输入电容 (Ciss)（最大值）:2850 pF @ 20 V
Power dissipation (maximum):84W（Tc）
Operating temperature:-55°C ~ 175°C（TJ）
Type of installation:表面贴装型
Supplier device packaging:DPAK
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