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MTA32ATF4G64HZ-2G6B2 SODIMM DDR4 MICROMProduct
- DDR
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OTHER
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TI
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ONSEMI
- MOSFET
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- Fast recovery/ultrafast recovery diode
- Logic gate
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- General purpose diode
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- Operational Amplifier
- Gate drive IC
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- infineon
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- Switch
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Product Detail
Model：NVMYS2D4N04CTWG
BRAND：onsemi
series：MOSEFT
description：MOSFET N-CH 40V 30A/138A LFPAK4
pack：（TR）
Part status：in stock
FET type：N channel
Technology：MOSFET
Drain-source voltage（Vdss）:40 V
25°C 时电流 - 连续漏极 (Id):30A（Ta），138A（Tc）
Drive voltage (Max Rds On, Min Rds On):10V
不同 Id、Vgs 时导通电阻（最大值）:2.3 毫欧 @ 50A，10V
不同 Id 时 Vgs(th)（最大值）:3.5V @ 90μA
不同 Vgs 时栅极电荷?(Qg)（最大值）:32 nC @ 10 V
Vgs（最大值）:±20V
不同 Vds 时输入电容 (Ciss)（最大值）:2100 pF @ 25 V
Power dissipation (maximum):3.9W（Ta），83W（Tc）
Operating temperature:-55°C ~ 175°C（TJ）
Type of installation:表面贴装型
Supplier device packaging:LFPAK4（5x6）
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