

Model:NVH4L160N120SC1
BRAND:onsemi
series:MOSEFT
description:SICFET N-CH 1200V 17.3A TO247
pack:pipe fittings
Part status:in stock
FET type:N channel
Technology:SiCFET(碳化硅)
Drain-source voltage(Vdss):1200 V
25°C 时电流 - 连续漏极 (Id):17.3A(Tc)
Drive voltage (Max Rds On, Min Rds On):20V
不同 Id、Vgs 时导通电阻(最大值):224毫欧 @ 12A,20V
不同 Id 时 Vgs(th)(最大值):4,3V @ 2,5mA
不同 Vgs 时栅极电荷?(Qg)(最大值):34 nC @ 20 V
Vgs(最大值):+25V,-15V
不同 Vds 时输入电容 (Ciss)(最大值):665 pF @ 800 V
Power dissipation (maximum):111W(Tc)
Operating temperature:-55°C ~ 175°C(TJ)
Type of installation:通孔
Supplier device packaging:TO-247-4L