

Model:NTH4L015N065SC1
BRAND:onsemi
series:MOSEFT
description:SILICON CARBIDE MOSFET, NCHANNEL
pack:(TR)
Part status:in stock
FET type:N channel
Technology:SiCFET(碳化硅)
Drain-source voltage(Vdss):650 V
25°C 时电流 - 连续漏极 (Id):142A(Tc)
Drive voltage (Max Rds On, Min Rds On):15V,18V
不同 Id、Vgs 时导通电阻(最大值):18 毫欧 @ 75A,18V
不同 Id 时 Vgs(th)(最大值):4.3V @ 25mA
不同 Vgs 时栅极电荷?(Qg)(最大值):283 nC @ 18 V
Vgs(最大值):+22V,-8V
不同 Vds 时输入电容 (Ciss)(最大值):4790 pF @ 325 V
Power dissipation (maximum):500W(Tc)
Operating temperature:-55°C ~ 175°C(TJ)
Type of installation:通孔
Supplier device packaging:TO-247-4L