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MT29F16G08ABACAWP-Z:C FLASH-NAND

型号:MT29F16G08ABACAWP-Z:C

类型：NAND FLASH

品牌:美光

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状态:在售

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产品详情

MT29F16G08ABACAWP-Z:C 详细参数介绍：

产品详情

脚位/封装	TSOP-48
外包装
无铅/环保	无铅/环保
电压(伏)	3.3 V
温度规格	0° ~ 70°C
速度	1 MHZ
标准包装数量	1000
标准外箱
Number Of Words	2G
Bit Organization	x8
Density	16G
Features	Polyimide (if applicable)
Package	TSOP I(48-pin CPL version)
Generation Feature Set	3rd set of device features (rev only if different)
Speed Grade	Async only
Design Revision	C
Classification	1-1-1-1 (Die-nCE-RnB-IO Channels)
Level	SLC
Production Status	Production
Package Material	Pb-free
Interface	Async only

General Description Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface： CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal. For further details, see Device and Array Organization.